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专利名称：SUBSTRATE FOR EPITAXIAL GROWTH发明人：Yuichi OSHIMA申请号：US12345933申请日：20081230
公开号：US20100028605A1公开日：20100204
摘要：A chamfering part is partially formed on the backside, opposite to the frontside of a substrate on which epitaxial growth is performed. When a size of the substrate isset at x (mm), preferably length of the chamfering part applied to the backside of thesubstrate is set at 2 mm or more and 0.15x (mm) or less. In addition, when the substrateis placed on a flat surface, with the front side turned up, preferably height and depth of agap formed between the substrate and the flat surface are set at 0.2 mm or more.
申请人：Yuichi OSHIMA
地址：Tsuchiura-shi JP
国籍：JP
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