【南京南山半导体有限公司 — 长电贴片三极管选型资料】www.nscn.com.cn
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
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TRANSISTOR (PNP) =
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=FEATURES
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z High current applications =
=z Complementary to KTC4375
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SOT--3L Plastic-Encapsulate Transistors
KTA1663
MAXIMUM RATINGS (Ta=25 unless otherwise noted) ℃
Symbol Parameter Value UnitVCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature -30 -30 -5 -1.5 500 150 -55~150 V V V A mW℃ SOT- -3L
1. BASE
2. COLLECTOR
3. EMITTER
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
SymbolV(BR)CBOV(BR)CEOV(BR)EBOICBO IEBO hFE VCE(sat) VBE fT Cob
Test conditions
Min
Typ Max UnitIC=-1mA, IE0 -30 V IC=-10mA, IB0 -30 V VCB=-30V, IE0 -0.1 μA VEB=-5V, IC0 -0.1 μA VCE=-2V, IC-0.5A 100 320 IE=-1mA, IC0 -5 V IC=-1.5A, IB-30mA -2 V VCE=-2V, IC-500mA 120 MHzVCB=-10V, IE0,f1MHz 50 MHz
VCE=-2V, IC-0.5A -1 V
CLASSIFICATION OF hFE Rank Range
O Y 100-200 160-320 A,Jun,2011
【南京南山半导体有限公司 — 长电三极管选型资料】www.nscn.com.cnSymbolAbb1cDD1EE1ee1LDimensions In MillimetersMin.Max.1.4001.6000.3200.5200.4000.5800.3500.4404.4004.6001.550 REF.2.3002.6003.9404.2501.500 TYP.3.000 TYP.0.9001.200Dimensions In InchesMin.Max.0.0550.0630.0130.0200.0160.0230.0140.0170.1730.1810.061 REF.0.0910.1020.1550.1670.060 TYP.0.118 TYP.0.0350.047
The bottom gasket
The file folder
Label on the Reel
Plastic bag
1000×1 PCS
The top gasket
Seal the box with the tape Stamp “EMPTY” on the empty box Seal the box with the tape QA Label
Label on the Inner Box
Inner Box: 210 mm× 208 mm×２０３ mm
Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm