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专利名称：Power semiconductor device and method
for producing a power semiconductor device
发明人：KULAS, HARTMUT申请号：EP141769.4申请日：20140714公开号：EP2854173A3公开日：20150429
专利附图：
摘要：the invention relates to a leistungshalbleitereinrichtung with aleistungshalbleitermodul and a heat sink, and a cooling plate in the
leistungshalbleitermodul, whereby the heat sink has a opening, an opening area of the
k\üh encircling lateral first lk\örpers is restricted, and the cooling plate isarranged in the opening.the cooling plate and a circular lateral first area of the coolingplate and the first surface of the k\ühlk\örpers a respective angle to theleistungshalbleiterbauelementen facing principal of cooling plate of less than 90degrees), with the first surface of the cooling plate and the first surface of thek\ühlk\örpers,circumferential along the first surface of the cooling plate andcircumferential along the first surface of the k\ühlk\örpers pressed each otherare arranged. the invention also relates to a process for the production of aleistungshalbleitereinrichtung thereon.the invention provides aleistungshalbleitereinrichtung, good heat conduction from the
leistungshalbleiterbauelementen a liquid durchstr\ömbaren heat sink of
leistungshalbleitereinrichtung has, and in the heat sink in the long term and reliable closeis t.
申请人：SEMIKRON ELEKTRONIK GMBH & CO. KG
地址：Sigmundstrasse 200 90431 Nürnberg DE
国籍：DE
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