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专利名称：Method for manufacturing semiconductor
device and the device thereof
发明人：Won Sic Woo申请号：US10882325申请日：20040702公开号：US070370B2公开日：20060620
专利附图：
摘要：The present invention relates to a method of manufacturing a semiconductordevice. The method comprises the steps of forming a plurality of lower bit lines arrangedin a first direction on a semiconductor substrate by performing ion implantation using a
mask defining the lower bit lines, forming a lower field oxide film within a region in whichthe lower bit lines are formed to define an active region and a device isolation region,forming a first insulating film for accumulating charges on the active region, forming aplurality of word lines arranged in parallel in a second direction orthogonal to the firstdirection of the lower bit lines, depositing an oxide film on the entire structure of thesemiconductor substrate including the lower bit lines and the word lines, flattening theoxide film and then removing the oxide film on the word lines, forming a secondinsulating film for accumulating charges corresponding to the first insulating film foraccumulating charges on the word lines and then forming an upper field oxide filmcorresponding to the lower field oxide film on the word lines, depositing polysilicon onthe entire structure of the semiconductor substrate, performing ion implantation using amask defining upper bit lines for polysilicon to form the upper bit lines, and thenperforming ion implantation using a mask defining an upper substrate to form the uppersubstrate, and removing given portions of the upper bit lines formed on the upper fieldoxide film to separate the upper bit lines.
申请人：Won Sic Woo
地址：Koori-Shi KR
国籍：KR
代理机构：Mayer, Brown, Rowe & Maw LLP
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