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专利名称：CHEMICAL MECHANICAL POLISHING
SLURRY, ITS PREPARATION METHOD ANDUSE FOR THE SAME
发明人：Hui-Fang HOU,Wen Cheng LIU,Yen-Liang
CHEN,Jui-Ching CHEN
申请号：US134513申请日：20120426
公开号：US20120270401A1公开日：20121025
专利附图：
摘要：A chemical mechanical polishing slurry for polishing a copper layer without
excessively or destructively polishing a barrier layer beneath the copper layer is
disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particlesthat are surface modified with a surface charge modifier and that have potassium ionsattached thereto. A method for preparing the chemical mechanical polishing slurry and achemical mechanical polishing method using the chemical mechanical polishing slurry arealso disclosed.
申请人：Hui-Fang HOU,Wen Cheng LIU,Yen-Liang CHEN,Jui-Ching CHEN
地址：Kaohsiung County TW,Kaohsiung County TW,Kaohsiung County TW,KaohsiungCounty TW
国籍：TW,TW,TW,TW
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