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专利名称：Process for producing integrated circuit, and
substrate with integrated circuit
发明人：Atsushi Tonai,Toshiharu Hirai,Tsuguo
Koyanagi,Masayuki Matsuda,Michio Komatsu
申请号：US10275087申请日：20010423公开号：US071632B2公开日：20070116
专利附图：
摘要：There is provided a process for producing an integrated circuit, wherein notonly can conductive fine particles be deposited efficiently and densely in minute wiring
channels and connecting holes but also a circuit of low wiring resistance and high densitycan be formed and wherein a high-degree integration can be achieved to thereby bringabout an economic advantage. In particular, there is provided a process for producing anintegrated circuit, comprising coating a substrate provided with wiring channels with acoating liquid for integrated circuit formation containing conductive fine particles tothereby form an integrated circuit on the substrate, wherein the coating liquid forintegrated circuit formation while being exposed to ultrasonic waves is applied to thewiring channels.
申请人：Atsushi Tonai,Toshiharu Hirai,Tsuguo Koyanagi,Masayuki Matsuda,MichioKomatsu
地址：Kitakyushu JP,Kitakyushu JP,Kitakyushu JP,Kitakyushu JP,Kitakyushu JP
国籍：JP,JP,JP,JP,JP
代理机构：The Webb Law Firm
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